Method of etching dual damascene structure
US7326650B2 · kind B2 · utility
3Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2001 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Aug 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard mask in order to prevent shoulder sag. By adopting this method, a dual damascene structure in which the extent of the shoulder sag at the hard mask is minimized can be achieved through etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.