Patent · US Expired

Iso/nested control for soft mask processing

US7328418B2 · kind B2 · utility

14Cited by

5References

19Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Asao Yamashita · Fishkill, US
Merritt Funk · Austin, US
Daniel Prager · Hopewell Junction, US

Key dates

Filing date	Feb 1, 2005
Grant date	Feb 5, 2008
Priority date	—
Expiry date	Feb 1, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.