Germanium deposition
US7329593B2 · kind B2 · utility
25Cited by
15References
59Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Jun 19, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.