Low power magnetoresistive random access memory elements
US7329935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2006 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Oct 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.