Inputting and outputting operating parameters for an integrated semiconductor memory device

US7330378B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Perner · Birkenfeld, DE
• Thorsten Bucksch · Munich, DE

Key dates

• Filing date: Nov 4, 2005
• Grant date: Feb 12, 2008
• Expiry date: Aug 4, 2026

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C7/20
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

An integrated semiconductor memory device includes a control circuit with a mode register to store operating parameters, as well as further registers to store further operating parameters. An operating parameter is selectively written to or read from one of the registers for storage of an operating parameter as a function of a first or second state of a configuration signal that is applied to an address connection. Any subsequent write and read access to one of the registers for storage of an operating parameter takes place analogously to a write and read access to a memory cell in a memory cell array. The integrated semiconductor memory device is thus operated to allow writing and reading of operating parameters using a standard interface and a standard protocol for inputting and outputting data to and from the memory cell array.