Semiconductor structures with structural homogeneity
US7332417B2 · kind B2 · utility
7Cited by
176References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Apr 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.