Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment
US7332422B2 · kind B2 · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Nov 16, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31616
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning a copper interconnect after a chemical-mechanical polishing that comprises: a) treating the surface of said copper interconnect with a nitrogen and oxygen containing treatment; and b) without breaking vacuum, treating the copper interconnect with a NH3 or H2 plasma treatment. Next a cap layer is formed over the copper interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.