Power semiconductor device with improved unclamped inductive switching capability and process for forming same

US7332750B1 · kind B1 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Jifa Hao · Scarborough, US
• John L. Benjamin · Smethport, US
• Randall L. Case · Mansfield, US
• Jae Jun YUN · Cheongju-si, KR

Key dates

• Filing date: Sep 1, 2000
• Grant date: Feb 19, 2008
• Expiry date: Sep 1, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N− doped, P− doped, and P+ doped semiconductor layers, the P− and P+ doped layers having a combined thickness of about 5 μm to about 12 μm. Recombination centers comprising noble metal impurities are disposed substantially in the N− and P− doped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an N− doped epitaxial layer on an N+ doped substrate, forming a P− doped layer in the N− doped epitaxial layer, forming a P+ doped layer in the P− doped layer, and forming in the P− and N− doped layers recombination centers comprising noble metal impurities. The P+ and P− doped layers have a combined thickness of about 5 μm to about 12 μm.