Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it

US7332788B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Ahlers · Hersbruck, DE
• Miguel Cuadron Marion · Birkenfeld, DE
• Uwe Wahl · Munich, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Aug 26, 2004
• Grant date: Feb 19, 2008
• Expiry date: Apr 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/114

Abstract

The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones (6) in charge compensation cells (27) that are arranged vertically and doped complimentarily to the semiconductor chip volume (5) are arranged in the entire chip volume, the complimentarily doped zones (6) extending right into surface regions (11) of the semiconductor power elements (7) and not projecting into surface regions (12) of semiconductor surface elements (1).