Charge-free layer by layer etching of dielectrics
US7335602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2006 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Jan 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber is in communication with the first chamber by way of an acceleration grid (211) having a variable potential. The gas flow into the plasma chamber is oscillated between a first state in which the gas flow into the first chamber has the composition f11 and the gas flow into the second chamber has the composition f21, and a second state in which the gas flow into the first chamber has the composition f12 and the gas flow into the second chamber has the composition f22. The potential applied to the acceleration grid is oscillated such that the voltage applied to the grid is V1 when the gas flow into the plasma chamber is in the first state, and the voltage applied to the grid is V2 when the gas flow into the plasma chamber is in the second state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.