Memory device
US7335907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2004 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Mar 3, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, of Zn—Ge—Te, content of Zn, Cd or the like is 20 atom percent or more, content of at least one element selected from the group consisting of Ge and Sb is less than 40 atom percent, and content of Te is 40 atom percent or more is used. It is thereby possible to implement the memory device usable for an application which may be performed at a high temperature such as an in-vehicle use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.