LED with current confinement structure and surface roughening
US7335920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.