Angled implant for shorter trench emitter
US7335947B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.