Magnetic random access memory array with coupled soft adjacent magnetic layer
US7335961B2 · kind B2 · utility
24Cited by
8References
17Claims
0Family size
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Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.