Method and system for contiguous proximity correction for semiconductor masks
US7341808B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 20, 2004 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Jan 23, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a method for patterning a set of features for a semiconductor device includes providing a mask including a substrate and at least one pair of first and second main features disposed on a substrate. The method also includes positioning the mask over a layer of light-sensitive material, and exposing the mask to a light source. The mask also includes at least one sub-resolution feature connecting the first and second main features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.