Kayvan Sadra
15Patents
4h-index
16Co-inventors
49Inventor score
Filing activity: Oct 26, 2001 → Sep 24, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8067279B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 114 | Active |
| US7327591B2 | Staggered memory cell array | Electricity | 94 | Expired |
| US7132340B2 | Application of post-pattern resist trim for reducing pocket-shadowing in SRAMs | Electricity | 9 | Expired |
| US8216903B2 | SRAM cell with asymmetrical pass gate | Electricity | 4 | Active |
| US7193277B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 4 | Expired |
| US7141468B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 3 | Expired |
| US7384839B2 | SRAM cell with asymmetrical transistors for reduced leakage | Electricity | 3 | Active |
| US7795085B2 | Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMs | Electricity | 2 | Active |
| US6677766B2 | Shallow trench isolation step height detection method | Electricity | 2 | Expired |
| US8664968B2 | On-die parametric test modules for in-line monitoring of context dependent effects | Physics | 2 | Active |
| US7314800B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 2 | Expired |
| US7341808B2 | Method and system for contiguous proximity correction for semiconductor masks | Physics | 1 | Expired |
| US7662688B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 1 | Active |
| US6968528B2 | Photo reticles using channel assist features | Physics | 0 | Expired |
| US8211773B2 | SRAM cell with asymmetrical pass gate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.