Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate
US7341910B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Jul 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a floating gate of a flash memory to improve the character of the flash memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.