Plasma enhanced atomic layer deposition system and method
US7341959B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Jan 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate. Electromagnetic power is coupled to a process electrode to generate a substrate zone plasma in the substrate zone that ionizes contaminants substantially in a region of the substrate, and electromagnetic power to a peripheral electrode to generate a peripheral zone plasma in the peripheral zone having a characteristic different from the substrate zone plasma such that ionized contaminants are transported from the substrate zone to th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.