System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2006 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Jun 16, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.