Inventor · Los Gatos, CA, US

Nima Mokhlesi

181Patents
35h-index
44Co-inventors
86Inventor score

Filing activity: Sep 14, 2000 → Oct 20, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US8045391B2 Non-volatile memory and method with improved sensing having bit-line lockout control Physics 416 Active
US7575973B2 Method of making three dimensional NAND memory Electricity 328 Active
US7851851B2 Three dimensional NAND memory Electricity 226 Active
US7514321B2 Method of making three dimensional NAND memory Electricity 221 Active
US7848145B2 Three dimensional NAND memory Physics 219 Active
US7745265B2 Method of making three dimensional NAND memory Electricity 217 Active
US7808038B2 Method of making three dimensional NAND memory Electricity 217 Active
US7068539B2 Charge packet metering for coarse/fine programming of non-volatile memory Physics 191 Expired
US7002843B2 Variable current sinking for coarse/fine programming of non-volatile memory Physics 126 Expired
US7139198B2 Efficient verification for coarse/fine programming of non-volatile memory Physics 122 Expired
US6345001B1 Compressed event counting technique and application to a flash memory system Physics 106 Expired
US7342831B2 System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates Physics 104 Active
US7310272B1 System for performing data pattern sensitivity compensation using different voltage Physics 102 Active
US7633802B2 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages Physics 93 Active
US7113432B2 Compressed event counting technique and application to a flash memory system Physics 90 Expired
US7508710B2 Operating non-volatile memory with boost structures Physics 86 Active
US7440324B2 Apparatus with alternating read mode Physics 81 Active
US7154779B2 Non-volatile memory cell using high-k material inter-gate programming Electricity 80 Expired
US7450421B2 Data pattern sensitivity compensation using different voltage Physics 78 Active
US7904793B2 Method for decoding data in non-volatile storage using reliability metrics based on multiple reads Electricity 78 Active
US7020026B2 Bitline governed approach for program control of non-volatile memory Physics 77 Expired
US7590002B2 Resistance sensing and compensation for non-volatile storage Physics 71 Active
US6850441B2 Noise reduction technique for transistors and small devices utilizing an episodic agitation Physics 70 Expired
US7049652B2 Pillar cell flash memory technology Physics 69 Expired
US7551477B2 Multiple bit line voltages based on distance Physics 68 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.