Fabrication method of semiconductor device
US7344978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Aug 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.