Wafer recovering method, wafer, and fabrication method
US7344998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Nov 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabrication methods. In one embodiment, a wafer-recovering method comprises providing a first wafer, wherein the first wafer has a base, a first conductive layer on the base, and a second conductive layer on the first conductive layer. The method further comprises removing the first and second conductive layers with an acidic solution to obtain a second wafer; and washing the second wafer with a liquid. The second conductive layer is formed on the first conductive layer in a deposition process, and the first conductive layer is more easily removed by the acidic solution than the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.