Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof

US7345310B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Anant Agarwal · San Jose, US
• Sumithra Krishnaswami · Morrisville, US
• Sei-Hyung Ryu · Cary, US
• D. Craig Capell · Durham, US

Key dates

• Filing date: Dec 22, 2005
• Grant date: Mar 18, 2008
• Expiry date: Jan 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.