Avalanche photodiode
US7345325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2007 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Feb 2, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.