Method and apparatus for impedance matching in transmission circuits using tantalum nitride resistor devices
US7345503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jul 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018571
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for trimming impedance matching devices in high-speed circuits includes determining an electrical parameter associated with a first tantalum nitride (TaN) resistor used as an impedance matching device in the circuit under test, and comparing the determined electrical parameter associated with the first TaN resistor to a desired design value of the electrical parameter. The resistance value of the first TaN resistor is altered by application of a trimming voltage thereto, wherein the trimming voltage is based on a voltage-resistance characteristic curve of the first TaN resistor. It is then determined whether the altered resistance value of the first TaN resistor causes the electrical parameter to equal the desired design value thereof, and the altering of the resistance value of the first TaN resistor by application of a trimming voltage is repeated until the electrical parameter equals the desired design value thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.