Multi-state thermally assisted storage
US7345911B2 · kind B2 · utility
33Cited by
12References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Feb 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A random access memory cell is described which is capable of storing multiple information states in a single physical bit. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.