Plasma in-situ treatment of chemically amplified resist
US7347915B1 · kind B1 · utility
4Cited by
20References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 5, 2006 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.