Patent · US Expired

Ferroelectric memory arrangement

US7348619B2 · kind B2 · utility

2Cited by

12References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rainer Bruchhaus · Yokohama, JP
Martin Gutsche · Dorfen, DE
Cay-Uwe Pinnow · Birkenfeld, DE

Key dates

Filing date	Aug 31, 2005
Grant date	Mar 25, 2008
Priority date	—
Expiry date	Dec 11, 2025

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/221
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A ferroelectric memory arrangement having memory cells, in each of which a vertical ferroelectric storage capacitor, which includes vertical electrodes and a ferroelectric dielectric between the vertical electrodes, is connected to a select transistor, the ferroelectric dielectric a plurality of ferroelectric layers, between each of which is arranged an insulating separating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.