Removing whisker defects
US7351663B1 · kind B1 · utility
7Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Jun 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.