Method of forming a substantially closed void
US7351669B2 · kind B2 · utility
4Cited by
6References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 23, 2004 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is placed to bridge and substantially close the space between the structures. The substrate is then inverted whilst maintaining the bridge and the deposited material is allowed to flow down to be substantially supported by the surface. The material is set in its substantially supported position, and the surface is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.