Method for producing silicon nitride films and process for fabricating semiconductor devices using said method

US7351670B2 · kind B2 · utility

Assignee

• L'Air Liquide, Société Anonyme à Directoire et Conseil de Surveillance pour l'Étude et l'Exploitation des Procédés Georges Claude · FR

Inventors

• Takeshi Hoshi · Yokohama, JP
• Tsuyoshi Saito · Ootawara, JP
• Takako Kimura · Urayasu, JP
• Christian Dussarrat · Tokyo, JP
• Kazutaka Yanagita · Kawagoe, JP

Key dates

• Filing date: Dec 23, 2004
• Grant date: Apr 1, 2008
• Expiry date: Aug 20, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).