Etch process for improving yield of dielectric contacts on nickel silicides

US7354867B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Scott D. Allen · Ledgewood, US
• Kenneth Bandy · Red Hook, US
• Sadanand V. Deshpande · Fishkill, US
• Richard S. Wise · Beacon, US

Key dates

• Filing date: Feb 3, 2005
• Grant date: Apr 8, 2008
• Expiry date: Apr 9, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.