Technique for uniformity tuning in an ion implanter system
US7355188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Oct 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.