Nickel silicide including indium and a method of manufacture therefor
US7355255B2 · kind B2 · utility
15Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2007 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Feb 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.