Inventor · Allen, TX, US

Amitabh Jain

72Patents
11h-index
57Co-inventors
81Inventor score

Filing activity: Mar 30, 2001 → Jun 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10726374B1 Risk prediction based on automated analysis of documents Physics 44 Active
US7211516B2 Nickel silicide including indium and a method of manufacture therefor Electricity 23 Expired
US10162850B1 Clause discovery for validation of documents Physics 20 Active
US6797593B2 Methods and apparatus for improved mosfet drain extension activation Electricity 19 Expired
US7344985B2 Nickel alloy silicide including indium and a method of manufacture therefor Electricity 18 Active
US7511350B2 Nickel alloy silicide including indium and a method of manufacture therefor Electricity 17 Active
US7355255B2 Nickel silicide including indium and a method of manufacture therefor Electricity 15 Active
US7247535B2 Source/drain extensions having highly activated and extremely abrupt junctions Electricity 15 Expired
US6812073B2 Source drain and extension dopant concentration Electricity 13 Expired
US6713360B2 System for reducing segregation and diffusion of halo implants into highly doped regions Electricity 12 Expired
US7118980B2 Solid phase epitaxy recrystallization by laser annealing Electricity 12 Expired
US7678637B2 CMOS fabrication process Electricity 9 Active
US6677201B1 Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistors Electricity 9 Expired
US7557022B2 Implantation of carbon and/or fluorine in NMOS fabrication Electricity 9 Active
US6482688B2 Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate Electricity 8 Expired
US7344929B2 Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity Electricity 8 Expired
US6808997B2 Complementary junction-narrowing implants for ultra-shallow junctions Electricity 8 Expired
US6743705B2 Transistor with improved source/drain extension dopant concentration Electricity 6 Expired
US8877581B2 Strain-engineered MOSFETs having rimmed source-drain recesses Electricity 6 Active
US8987748B2 Drain induced barrier lowering with anti-punch-through implant Electricity 6 Active
US10409805B1 Clause discovery for validation of documents Physics 6 Active
US8558310B2 Indium, carbon and halogen doping for PMOS transistors Electricity 6 Active
US7345355B2 Complementary junction-narrowing implants for ultra-shallow junctions Electricity 5 Expired
US6847089B2 Gate edge diode leakage reduction Electricity 5 Expired
US7932139B2 Methodology of improving the manufacturability of laser anneal Performing Operations; Transporting 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.