Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Dec 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/565
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-volatile storage elements are programmed in a manner that reduces program disturb by using modified pass voltages. In particular, during the programming of a selected storage element associated with a selected word line, a higher pass voltage is applied to word lines associated with previously programmed non-volatile storage elements in the set than to word lines associated with unprogrammed and/or partly programmed non-volatile storage elements in the set. The pass voltage is sufficiently high to balance the channel potentials on the source and drain sides of the selected word line and/or to reduce leakage of charge between the boosted channel regions. Optionally, an isolation region is formed between the boosted channel regions by applying a reduced voltage on one or more word lines between the selected word line and the word lines that receive the higher pass voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.