Tri-gate devices and methods of fabrication
US7358121B2 · kind B2 · utility
117Cited by
56References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2002 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Aug 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.