Method and apparatus for in-situ film stack processing
US7358192B2 · kind B2 · utility
172Cited by
47References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2004 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | May 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.