Non-volatile nanocrystal memory and method therefor
US7361567B2 · kind B2 · utility
9Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Jan 26, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Jul 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nanocrystal non-volatile memory (NVM) has a dielectric between the control gate and the nanocrystals that has a nitrogen content sufficient to reduce the locations in the dielectric where electrons can be trapped. This is achieved by grading the nitrogen concentration. The concentration of nitrogen is highest near the nanocrystals where the concentration of electron/hole traps tend to be the highest and is reduced toward the control gate where the concentration of electron/hole traps is lower. This has been found to have the beneficial effect of reducing the number of locations where charge can be trapped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.