Method for pattern formation using photoresist cleaning solution
US7364837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2007 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.