Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US7365045B2 · kind B2 · utility
27Cited by
10References
14Claims
0Family size
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Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | May 22, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.