Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
US7365321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Apr 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.