Programmable resistance memory element and method for making same
US7365354B2 · kind B2 · utility
2Cited by
7References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2002 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.