Trench power MOSFET with reduced gate resistance
US7368353B2 · kind B2 · utility
3Cited by
3References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 4, 2004 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Nov 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.