FinFET transistor and circuit

US7368355B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kerry Bernstein · Underhill, US
• Edward J. Nowak · South Burlington, US
• BethAnn Rainey · South Burlington, US

Key dates

• Filing date: Jul 18, 2006
• Grant date: May 6, 2008
• Expiry date: Aug 10, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.