Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body

US7368358B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Qiqing C. Ouyang · Yorktown Heights, US
• Xiangdong Chen · Irvine, US

Key dates

• Filing date: Feb 2, 2006
• Grant date: May 6, 2008
• Expiry date: Dec 1, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/711

Abstract

A structure, and method of fabrication, for high performance field effect devices is disclosed. The MOS structures include a crystalline Si body of one conductivity type, a strained SiGe layer epitaxially grown on the Si body serving as a buried channel for holes, a Si layer epitaxially grown on the SiGe layer serving as a surface channel for electrons, and a source and a drain containing an epitaxially deposited, strained SiGe of opposing conductivity type than the Si body. The SiGe source/drain forms a heterojunction and a metallurgical junction with the Si body that coincide with each other with a tolerance of less than about 10 nm, and preferably less than about 5 nm. The heterostructure source/drain is instrumental in reducing short channel effects. These structures are especially advantageous for PMOS due to increased hole mobility in the compressively strained SiGe channel. Representative embodiments include CMOS structures on bulk and on SOI.