Film formation apparatus and method of using the same
US7368384B2 · kind B2 · utility
2Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Apr 4, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.