Solid solution wide bandgap semiconductor materials
US7371282B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.