Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
US7371283B2 · kind B2 · utility
1Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Nov 22, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Mar 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.