Uniform etch system
US7371332B2 · kind B2 · utility
21Cited by
60References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2003 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Apr 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.